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CVD-Dia

Diamond Product Line-up

1. The world’s first product with the highest thermal performance.
2. CTE control: CTE matching with GaN, GaAs, SiC, and Si semiconductors
3. Flexible design enabling selective insulation and conduction CVD-Diamond structures

Model		*CD-Core
Structure		Cu/CVD-Dia./Cu
Dia. Volume ratio		·
Internal Structure Image
CTE (ppm/K)	RT	3.0
	RT~200°C	3.2
	RT~400°C	3.4
	RT~800°C	4.6
Thermal conductivity (W/m K)		~ 1200 ~
Thermal conductivity (W/m K)		*Values may vary depending on the upper and lower Cu skin thickness.
Thickness (mm)		0.25 ≤t

좌우 스크롤

CVD-Diamond wafer

Control of the growth surface of CVD-Diamond

CVD-Diamond Product Characteristics

· Very high TC (thermal conductivity)
· CTE (coefficient of thermal expansion) control technology: Precise CTE matching with GaN, GaAs, SiC, and Si semiconductors

CD (CVD-Diamond) Core

CD-Core structure
Diamond Core Cu Skin structure

All Edges are very sharpened and clean : Radius < 10㎛, < 5㎛ optional

Cross-section

TDV (Through Diamond Via)

TDV structure
selectively conductive through vias

Cross-section

Diamond DBC (Direct-Bonded-Cu)

Electrical Insulators

· Free circuit design possible through selective conductivity and diamond insulation through circuit design and through-holes
· Applicable to stacked 3D packages
· World's first and highest-performance CVD-diamond product

더굿시스템

PRODUCTS

CVD-Dia

CVD-Dia

Diamond Product Line-up

CVD-Diamond wafer

Control of the growth surface of CVD-Diamond

CVD-Diamond Product Characteristics

CD (CVD-Diamond) Core

CD-Core structure

Diamond Core Cu Skin structure

All Edges are very sharpened and clean : Radius < 10㎛, < 5㎛ optional

Cross-section

TDV (Through Diamond Via)

TDV structure

selectively conductive through vias

Cross-section

Diamond DBC (Direct-Bonded-Cu)

Electrical Insulators

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